Fabrication and Characterization of Aluminum-Doped Nickel Oxide Thin Films for Optoelectronic Applications using the SILAR Method
DOI:
https://doi.org/10.56919/usci.2434.009Keywords:
SILAR, doping, time variation, Nickel oxide, thin filmsAbstract
Study’s Excerpt
- The effect of varying annealing times on 10% Aluminum-doped Nickel Oxide (ANO) thin films, deposited via the SILAR technique is presented.
- SEM and RBS analyses were used for detailed correlation between annealing time and the film's microstructural improvements.
- ANO thin films could be used for advanced technological applications.
Full Abstract
The effect of varying the annealing time of %10 aluminium-doped Nickel Oxide thin film was studied to understand the possible effect on the optical, structural, and electrical properties of %10 aluminium-doped Nickel Oxide (ANO) for possible application. The thin films were deposited on glass substrates using the successive ionic layer adsorption reaction (SILAR) deposition technique. The samples formed were annealed at 3000C, and the annealing time varied at 1.35 hrs., 1.45 hrs., 1.55 hrs., and 2 hrs, respectively. The deposited films were characterized to obtain the optical, electrical, and structural characteristics and the compositional constituent of the film using the double beam photo spectrometer, Four-Point Probe, Scanned electron Microscope, Energy Dispersion Spectroscopy, and X-ray Diffractometer. The films were observed to have low absorbance in the range of 0.1 to 0.01 and high % transmittance within the range of 80% - 98% in the visible region of the spectrum. The reflectance of the film was observed to decrease with an increase in annealing time in the range of 10% - 2.5%, all in the visible region of the spectrum. The crystallite size of the deposited films decreased with increased annealing time with the structural formation of simple cubic phase NiO thin film. SEM micrograph of the thin films reveals that an increase in annealing time improved the crystallinity of the films with the grain size evenly distributed. The EDS result of the deposited films revealed the presence of nickel, aluminum and Oxygen as the major constituent of the deposited films. The Ruther Ford Backscattering (RBS) analysis of the thickness of the films shows an increase in the thickness with an increase in annealing time. Clearer compositions of the films were also seen from the RBS analysis. Their electrical properties revealed that the films formed had low electrical resistivity and high conductivity, so they could be useful in making optoelectronics devices and corrosion resistance.
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Copyright (c) 2024 Kanayochukwu Uchechi Patricia Okpechi, Elizabeth Chinyere Nwaokorongwu, U Joseph, Chinyere Ozochi Akwuegwu, Uchechi Ezere
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